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AFGHL50T65RQDN

Part Number	AFGHL50T65RQDN
Manufacturer	ON Semiconductor
Description	IGBT
Published	Oct 3, 2022
Detailed Description	IGBT for Automotive Application 650 V, 50 A AFGHL50T65RQDN Using novel field stop IGBT technology, onsemi’s new series o...
Datasheet	AFGHL50T65RQDN PDF File

Overview

IGBT for Automotive Application 650 V, 50 A AFGHL50T65RQDN Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.
6 V (Typ.
) @ IC = 50 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impedance • Fast Switching • Tightened Parameter Distribution • This Device is Pb−Free and RoHS Compliant Typical Applications • So...

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AFGHL50T65RQDN IGBT - ON Semiconductor

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