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AFGHL25T120RHD

ON Semiconductor
Part Number AFGHL25T120RHD
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description IGBT for Automotive Application 1200 V, 25 A AFGHL25T120RHD Description This Insulated Gate Bipolar Transistor (IGBT) fe...
Datasheet PDF File AFGHL25T120RHD PDF File

AFGHL25T120RHD
AFGHL25T120RHD

Overview
IGBT for Automotive Application 1200 V, 25 A AFGHL25T120RHD Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction.
Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performance for both hard and soft switching topology in automotive application.
Features • Extremely Efficient Trench with Field Stop Technology • Maximum Junction Temperature: TJ = 175°C • Short Circuit Withstand Time 8 ms • 100% of the Parts Tested for ILM (Note 2) • Fast Switching • Tighten Parameter Distribution • AEC−Q101 Qual...


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