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AFGB30T65SQDN

ON Semiconductor
Part Number AFGB30T65SQDN
Manufacturer ON Semiconductor
Description IGBT
Published Oct 2, 2022
Detailed Description AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features • Maximum Junction Temperature: TJ = 175°C ...
Datasheet PDF File AFGB30T65SQDN PDF File

AFGB30T65SQDN
AFGB30T65SQDN

Overview
AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.
6 V (typ.
) @ IC = 30 A • Low VF Soft Recovery Co−packaged Diode • AEC−Q101 Qualified • 100% of the Parts are Dynamically Tested (Note 1) Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for HEV MAXIMUM RATINGS (TC = 25°C unless otherwise stated) Parameter Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage Collector Current (TC = 25°C) Collector Current (TC = 100°C) Pulsed Collector Current (Note 2) Diode Forward Current (TC = 25°C) Diode Forward Current (TC = 100°C) Pulsed Diode Maximum Forward Current (Note 2) VCES 650 V VGES ±20 V VGES ±30 V IC 60 A 30 A ICM 120 A IF 40 A 20 A IFM 120 A Maximum Power Dissipation (TC = 25°C) Maximum Power Dissipation (TC = 100°C) Operating Junction and Storage Temperature Range PD 220 W 110 W TJ, TSTG −55 to °C +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 100 W, Inductive Load 2.
Repetitive rating: pulse width limited by max.
Junction temperature 3.
Surface−mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad.
4.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
www.
onsemi.
com BVCES 650 V VCE(sat) TYP 1.
6 V C IC MAX 120 A G E C G E D2PAK 3 LEAD CASE 418AJ MARKING DIAGRAM &Y&Z&3&K AFGB 30T65SQDN &Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digit Lot Traceability Code AFGB30T65SQDN = Specific Device Code ORDERING INFORMATION Device Package Shipping† AFGB30T65SQDN D2PAK (TO...


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