N-channel MOSFET - Samwin
Description
SW058R72E7T
N-channel Enhanced mode TO-220 MOSFET
Features
TO-220
High ruggedness
Low RDS(ON) (Typ 6.
3mΩ)@VGS=10V Low Gate Charge (Typ 107nC)
Improved dv/dt Capability
100% Avalanche Tested Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
12 3
General Description
1.
Gate 2.
Drain 3.
Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
Order Codes
BVDSS : 72V
ID
: 100A
RDS(ON) : 6.
3mΩ
2
1 3
Item
Sales Type
Marking
Package
Packaging
1
SW P 058R72E7T
SW058R72E7T
TO-220
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS EAR dv/dt
Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode recovery dv/dt
(note 1)
(note 2) (note 1) (note 3)
Total power dissipation (@TC=25oC)
PD Derating factor above 25oC
TSTG, TJ Operating junction temperature & storage temperature
Maximum lead temperature for soldering
TL
purpose, 1/8 from case for 5 seconds.
*.
Drain current is limited by junction temperature.
Thermal characteristics
Value 72 100* 80* 400 ±20 240 24 5
223.
2 1.
8
-55 ~ + 150 300
Unit V A A A V mJ mJ
V/ns W
W/oC oC oC
Symbol
Parameter
Value
Unit
Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient
0.
56 47
oC/W oC/W
Copyright@ SEMIPOWER Electronic Technology Co.
, Ltd.
All rights reserved.
Sep.
2019.
Rev.
0.
5 1/6
SW058R72E7T
Electrical characteristic ( TJ = 25oC unless otherwise specified )
Symbol
Parameter
Off characteristics
BVDSS ΔBVDSS
/ ΔTJ
Drain to source breakdown voltage Breakdown voltage temperature coefficient
IDSS Drain to source leakage current
Test conditions
...
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