N-Channel MOSFET Transistor - Inchange Semiconductor
Description
isc N-Channel MOSFET Transistor
NDB6060L
FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 20mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±16
V
ID
Drain Current-Continuous
48
A
IDM
Drain Current-Single Pluse
144
A
PD
Total Dissipation @TC=25℃
100
W
TJ
Max.
Operating Junction Temperature -55~175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.
5
UNIT ℃/W
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iscsemi.
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isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
CONDITIONS VGS= 0; ID= 0.
25mA VDS= 10V; ID= 0.
25mA VGS= 10V; ID= 24A VGS= ±16V;VDS= 0 VDS= 60V; VGS= 0 IS= 24A; VGS= 0
NDB6060L
MIN MAX UNIT
60
--
V
1.
0
2.
0
V
--
20
mΩ
--
±0.
1
uA
--
250
uA
--
1.
3
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to ...
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