DatasheetsPDF.com

IS25WE512M

ISSI
Part Number IS25WE512M
Manufacturer ISSI
Description 512Mb SERIAL FLASH MEMORY
Published Jul 22, 2022
Detailed Description IS25LE512M IS25WE512M 512Mb SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC ...
Datasheet PDF File IS25WE512M PDF File

IS25WE512M
IS25WE512M


Overview
IS25LE512M IS25WE512M 512Mb SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC 512Mb SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON CHIP ECC IS25LE512M IS25WE512M FEATURES • Industry Standard Serial Interface - IS25LE512M: 512Mbit/64Mbyte - IS25WE512M: 512Mbit/64Mbyte - 3 or 4 Byte Addressing Mode - Supports Standard SPI, Fast, Dual, Dual I/O, Quad, Quad I/O, SPI DTR, Dual I/O DTR, Quad I/O DTR, and QPI - Software & Hardware Reset - Supports Serial Flash Discoverable Parameters (SFDP) • High Performance Serial Flash (SPI) - 50MHz Normal Read - Up to133Mhz Fast Read: 133MHz (max) for 3.
0V, 112MHz (max) for 1.
8V - Up to 66MHz DTR (Dual Transfer Rate) - Equivalent Throughput of 532 Mb/s - Selectable Dummy Cycles - Configurable Drive Strength - Supports SPI Modes 0 and 3 - More than 100,000 Erase/Program Cycles - More than 100-year Data Retention - 1-bit ERROR Detection and Correction per 64-bit boundary (with ECC) • Flexible & Efficient Memory Architecture - Chip Erase with Uniform Sector/Block Erase (4/32/64KB or 4/32/256 KB)(2) - Program 1 to 256 or 512 Byte per Page(2) - Program/Erase Suspend & Resume • Efficient Read and Program modes - Low Instruction Overhead Operations - Continuous Read 8/16/32/64 Byte Burst Wrap - Selectable Burst Length - QPI for Reduced Instruction Overhead - Data Learning Pattern for training in DTR operation • Low Power with Wide Temp.
Ranges - Single Voltage Supply IS25LE: 2.
30V to 3.
60V, 133MHz (max) IS25WE: 1.
70V to 1.
95V - 13 mA Active Read Current - 21 µA Standby Current - 1 µA Deep Power Down - Temp Grades: - Temp Grades: Extended: -40°C to +105°C Auto Grade (A3): -40°C to +125°C • Advanced Security Protection - Software and Hardware Write Protection - Advanced Sector/Block Protection - Top/Bottom Block Protection - Power Supply Lock Protection - 4x256 Byte Dedicated Security Area with OTP User-lockable Bits - 128 bit Unique ID for Each Device (Call Factory...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)