Thyristors - Inchange Semiconductor
Description
isc Thyristors
Q6006DH3
DESCRIPTION ·With TO-252( DPAK ) uninsulated packaging ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(RSM) Average on-state current
ITSM Surge non-repetitive on-state current
PG(AV) Tj Tstg
Average gate power dissipation Operating junction temperature Storage temperature
60HZ 50HZ
MAX
600 600
6 65 55 0.
4
-40~125
-40~125
UNIT
V V A
A
W ℃ ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current
VR=VRRM Rated; VD=VDRM Rated;
Tj=25℃ Tj=100℃ Tj=125℃
VTM On-state voltage
IGT
Gate-trigger current
IT=6A
Ⅰ
VD =12V;IT=0.
1A;
Ⅱ
Ⅲ
VGT Gate-trigger voltage
VD =12V;IT=0.
1A;
MAX
0.
01 0.
5 2.
0 1.
6
10 10 10
1.
3
UNIT
mA V mA V
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification.
The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment.
The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field.
Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
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