KSE45H11 Datasheet

KSE45H11 Silicon PNP Power Transistor

·Collector-Emitter Breakdown Voltage : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 60(Min)@ (VCE= -1V, IC= -2A) ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -8A, IB= -0.4A) ·Complement to Type KSE44H11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation .

Features

own Voltage VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain *:Pulse test PW≤300us,duty cycle≤2% CONDITIONS IC= -30mA; IB= 0 IC= -8A; IB= -400mA IC=8A; IB= 800mA VCE= -80V; IE= 0 VEB= -5V; IC= 0 IC= -2A; VCE= -1V IC= -4A; VCE= -1V KSH45H11 MIN MAX UNIT -80 V -1.0 V -1.5 V -10 uA -50 uA 60 40 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information containe.