DatasheetsPDF.com

2SK3581S

Part Number	2SK3581S
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jul 9, 2022
Detailed Description	isc N-Channel MOSFET Transistor 2SK3581S FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(...
Datasheet	2SK3581S PDF File

Overview

isc N-Channel MOSFET Transistor 2SK3581S FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
46Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Pluse 64 A PD Total Dissipation @TC=25℃ 225 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg ...

Similar Datasheet

2SK358 N-Channel Transistor - Toshiba
2SK358 N-Channel MOSFET Transistor - Inchange Semiconductor
2SK3580-01MR N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3580-01MR N-Channel MOSFET - INCHANGE
2SK3581-01L N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3581-01S N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3581-01SJ N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3581L N-Channel MOSFET Transistor - Inchange Semiconductor
2SK3581S N-Channel MOSFET Transistor - Inchange Semiconductor
2SK3582TK N-Channel MOSFET - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)