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AO4838

Alpha & Omega Semiconductors
Part Number AO4838
Manufacturer Alpha & Omega Semiconductors
Description 30V Dual N-Channel MOSFET
Published Jul 8, 2022
Detailed Description AO4838 30V Dual N-Channel MOSFET General Description Product Summary The AO4838 combines advanced trench MOSFET techn...
Datasheet PDF File AO4838 PDF File

AO4838
AO4838

Overview
AO4838 30V Dual N-Channel MOSFET General Description Product Summary The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) 100% UIS Tested 100% Rg Tested 30V 11A < 9.
6mΩ < 13mΩ Top View SOIC-8 Bottom View Top View S2 1 8 G2 2 7 S1 3 6 G1 4 5 D2 D2 D1 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.
1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 11 9 60 30 45 2 1.
3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 48 74 Maximum Junction-to-Lead Steady-State RθJL 32 Max 62.
5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0: December 2010 www.
aosmd.
com Page 1 of 6 AO4838 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.
5 2 2.
6 V ID(ON) On state drain current VGS=10V, VDS=5V 60 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A TJ=125°C 8 9.
6 mΩ 11.
5 14 VGS=4.
5V, ID=10A 10.
4 13 mΩ gFS Forward Transconductance VDS=5V, ID=11A 50 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.
7 1 V IS Maximum Body-Diode Continuous Current 2.
5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ...


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