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1EDS5663H

Infineon
Part Number 1EDS5663H
Manufacturer Infineon
Description GaN gate driver
Published Jul 6, 2022
Detailed Description GaN EiceDRIVER™ product family Single-channel functional and reinforced isolated gate-drive ICs for high-voltage enhance...
Datasheet PDF File 1EDS5663H PDF File

1EDS5663H
1EDS5663H

Overview
GaN EiceDRIVER™ product family Single-channel functional and reinforced isolated gate-drive ICs for high-voltage enhancement-mode GaN HEMTs Features • Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products) – low driving impedance (on-resistance 0.
85 Ω source, 0.
35 Ω sink) – resistor programmable gate current (typ.
10 mA) in steady “on” state – programmable negative gate voltage to completely avoid spurious turn-on • Single output supply voltage (typ.
8 V, floating) • Switching behavior independent of duty-cycle (2 "off" voltage levels) • Differential concept to ensure negative gate drive voltage under any condition • Fast input-to-output prop...


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