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2SCR542D

Part Number	2SCR542D
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Jul 3, 2022
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Volt...
Datasheet	2SCR542D PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain hFE :200-500@ IC= 0.
5A ·Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6.
0 V IC Collector Current-Continuous 5.
0 A ICM Collector Current-Pulse PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 10 A 10 W 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃...

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