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ISCNH363N

Part Number	ISCNH363N
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Jun 30, 2022
Detailed Description	isc N-Channel MOSFET Transistor ISCNH363N FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V...
Datasheet	ISCNH363N PDF File

Overview

isc N-Channel MOSFET Transistor ISCNH363N FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 59 A PD Total Dissipation @TC=25℃ 235 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERI...

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ISCNH363N Silicon NPN Power Transistor - INCHANGE

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