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ISCN366P

INCHANGE
Part Number ISCN366P
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Jun 30, 2022
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 20-60@IC = 0.5A ·Collector-Emitter Sustaining Vol...
Datasheet PDF File ISCN366P PDF File

ISCN366P
ISCN366P

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 20-60@IC = 0.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 5.
0 A PC Collector Power Dissipation@ TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMB...


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