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2N7002KW

Part Number	2N7002KW
Manufacturer	ON Semiconductor
Description	N-Channel FET
Published	Jun 28, 2022
Detailed Description	2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On−Resistance • Low Gate Threshold Voltage ...
Datasheet	2N7002KW PDF File

Overview

2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • These Devices are Pb−Free and are RoHS Compliant • ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22 C101 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Gate−Source Voltage Maximum Drain Current Continuous TJ = 100°C Pulsed VDSS VGSS ID 60 V ±20 V 310 mA 195 mA 1.
2 A Operating Junction Temperature Range TJ −55 to °C +150 Storage Temperature Range TSTG −55 to °C...

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