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NVMFWS004N10MC

ON Semiconductor
Part Number NVMFWS004N10MC
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jun 28, 2022
Detailed Description DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 100 V, 3.9 mW, 138 A NVMFWS004N10MC V(BR)DSS 100 V RDS(ON)...
Datasheet PDF File NVMFWS004N10MC PDF File

NVMFWS004N10MC
NVMFWS004N10MC

Overview
DATA SHEET www.
onsemi.
com MOSFET – Power, Single N-Channel 100 V, 3.
9 mW, 138 A NVMFWS004N10MC V(BR)DSS 100 V RDS(ON) MAX 3.
9 mW @ 10 V ID MAX 138 A D (5,6) Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Note 1) Steady TC = 100°C Power Dissipation RqJC (Note 1) State TC = 25°C PD TC = 100°C 138 A 98 164 W 82 Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 21 A 15 3.
8 W 1.
9 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) IS Single Pulse Drain−to−Source Avalanche EAS Energy (IL(pk) = 9.
2 A) Lead Temperature Soldering Reflow for Solder- TL ing Purposes (1/8″ from case for 10 s) 126 A 536 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 1) RqJC 0.
91 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 1.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2.
Surface−mounted on FR4 board using 1 in2 pad size, 2 oz.
Cu pad.
G (4) S (1,2,3) N−CHANNEL MOSFET DFN5 (SO8FL WF) CASE 507BA MARKING DIAGRAM D S D S XXXXXX ...


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