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FQU9N25

ON Semiconductor
Part Number FQU9N25
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jun 28, 2022
Detailed Description FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET FQD9N25 / FQU9N25 N-Channel QFET® MOSFET 250 V, .4 A, PΩ Description Th...
Datasheet PDF File FQU9N25 PDF File

FQU9N25
FQU9N25


Overview
FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET FQD9N25 / FQU9N25 N-Channel QFET® MOSFET 250 V, .
4 A, PΩ Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D Features • 7.
4 A, 250 V, RDS(on) = 420 mΩ (Max.
) @VGS = 10 V, ID = 3.
7 A • Low Gate Charge (Typ.
15.
5 nC) • Low Crss (Typ.
15 pF) • 100% Avalanche Tested D G S D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol , 5 5 , <  5 < !$ 7     Parameter    ,         2.
)*63   2.
0++63     7     :  ,     7 (! <     (!      -!(! <     7 >- !!$ 7  2 .
)*63? 7  2.
)*63   "!)*6          -   B         0$C  *   G S FQD9N25TM FQD9N25TM-F080 FQU9N25TU )*+ &' '& )8 9 ±;+ 09* &' ** ** )* ** + '' **A0*+ ;++ Unit , ( ( ( , = ( = ,$  @ @ @$6 6 6 Thermal Characteristics Symbol Parameter RJC RJA Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 pad of 2 oz copper), Max.
FQD9N25TM FQD9N25TM-F080 FQU9N25TU 2.
27 110 50 Unit oC/W ©2000 Semiconductor Components Industries, LLC.
October-2017,Rev.
3 Publication Order Number: FQU9N25/D FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET Package Marking and Ordering Information Pa...


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