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FQB8N90C

Fairchild Semiconductor
Part Number FQB8N90C
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Jun 28, 2022
Detailed Description FQB8N90C — N-Channel QFET® MOSFET FQB8N90C N-Channel QFET® MOSFET 900 V, 6.3 A, 1.9 Ω Description These N-Channel enhan...
Datasheet PDF File FQB8N90C PDF File

FQB8N90C
FQB8N90C

Overview
FQB8N90C — N-Channel QFET® MOSFET FQB8N90C N-Channel QFET® MOSFET 900 V, 6.
3 A, 1.
9 Ω Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
December 2013 Features • 6.
3 A, 900 V, RDS(on) = 1.
9 Ω (Max.
) @ VGS = 10 V • Low Gate Charge (Typ.
35 nC) • Low Crss (Typ.
12 pF) • Fast Switching • 100% Avalanche Tested • Improved dv...


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