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FMW60N070S2HF

Fuji Electric
Part Number FMW60N070S2HF
Manufacturer Fuji Electric
Description N-Channel power MOSFET
Published Jun 24, 2022
Detailed Description FMW60N070S2HF http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J MOS® S2 series N-Channel e...
Datasheet PDF File FMW60N070S2HF PDF File

FMW60N070S2HF
FMW60N070S2HF

Overview
FMW60N070S2HF http://www.
fujielectric.
com/products/semiconductor/ FUJI POWER MOSFET Super J MOS® S2 series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant uses Halogen-free molding compound Applications For switching Equivalent circuit schematic ②Drain ①②③ ① Gate ③Source Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Continuous Diode Forward Current Pulsed Diode Forward Current Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAS EAS dVDS/dt ISD ISDP dV/dt -di/dt Maximum Power Dissipation PD Tch Operating and Storage Temperature range Tstg Note *1 : Maximum duty cycle D=0.
55 Note *2 : Limited by maximum channel temperature.
Note *3 : Tch≤150°C, See Fig.
1 and Fig.
2 Note *4 : S‌ tarting Tch=25°C, IAS=3.
8A, L=166mH, VDD=60V, RG=50Ω, See Fig.
1 and Fig.
2 EAS limited by maximum channel temperature and avalanche current.
Note *5 : ISD≤39.
4A, -di/dt≤100A/μs, VDS peak≤ 600V, Tch≤150°C.
Note *6 : ISD≤39.
4A, dV/dt≤15V/ns, VDS peak≤ 600V, Tch≤150°C.
Characteristics 600 600 53.
2 33.
6 158 ±30 6.
3 1305 50 53.
2 33.
6 158 15 100 2.
5 270 150 -55 to +150 Unit V V A A A V A mJ V/ns A A A V/ns A/μs W °C °C Remarks VGS=-30V TC=25°C Note*1,2 TC=100°CNote*1,2 Note *2 Note *3 Note *4 VDS≤ 600V TC=25°C Note*1,2 TC=100°CNote*1,2 Note *2 Note *5 Note *6 Ta=25°C TC=25°C 1 8987a MARCH 2017 FMW60N070S2HF FUJI POWER MOSFET http://www.
fujielectric.
com/products/semiconductor/ Electrical Characteristics at TC=25°C (unless otherwise specified) • Static Ratings Parameter Symbol Conditions Drain-Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance Gate resistance R...


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