ES1DFL – ES1JFL
Taiwan Semiconductor
1A, 200V - 600V Super Fast Surface Mount Rectifier
FEATURES
● Glass passivated chip junction ● Ideal for automated placement ● Low profile package ● Low power loss, high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application
KEY PARAMETERS
PARAMETER VALUE UNIT
IF
1
A
VRRM
200 - 600 V
IFSM
30
A
TJ MAX
150
°C
Package
SOD-123FL
Configuration
Single die
MECHANICAL DATA
● Case: SOD-123FL ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: Indicated by cathode band ● Weight: 0. 016g (approximately)
SOD-123FL
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL ES1DFL ES1GFL
Marking code on the device
EDF
EGF
Repetitive peak reverse voltage
VRRM
200
400
Reverse voltage, total rms value
VR(RMS)
140
280
Forward current
IF
Peak forward surge current, 8. 3ms single half sine-wave superimposed on rated load
IFSM
Junction temperature
TJ
1 30 - 55 to +150
Storage temperature
TSTG
- 55 to +150
ES1JFL EJF 600 420
UNIT
V V A A °C °C
1
Version: D2103
ES1DFL – ES1JFL
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance
SYMBOL RӨJL RӨJA
TYP 35 85
UNIT °C/W °C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
Forward voltage(1)
ES1DFL
ES1GFL IF = 1A, TJ = 25°C
VF
ES1JFL
Reverse current @ rated VR(2)
Reverse recovery time
Junction capacitance Notes: 1. Pulse test with PW = 0. 3ms 2. Pulse test with PW = 30ms
TJ = 25°C
TJ = 125°C
IR
IF = 0. 5A , IR = 1. 0A Irr = 0. 25A
trr
1MHz, VR = 4. 0V
CJ
TYP -
-
8
MAX 1. 0 1. 3 1. 7 5 100
35
-
UNIT V V V µA µA
ns
pF
ORDERING INFORMATIO...
ES1DFL PDF File
