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NVTYS014P04M8L

Part Number	NVTYS014P04M8L
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Apr 4, 2022
Detailed Description	MOSFET – Power, Single P-Channel −40 V, 13.5 mW, −53 A Product Preview NVTYS014P04M8L Features • Small Footprint (3.3 ...
Datasheet	NVTYS014P04M8L PDF File

Overview

MOSFET – Power, Single P-Channel −40 V, 13.
5 mW, −53 A Product Preview NVTYS014P04M8L Features • Small Footprint (3.
3 x 3.
3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 2, 4) Power Dissipation RqJC (Notes 1, 2) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C −53 A −39 88 W 44 Continuous Drain Current RqJA (Notes 1, 3, 4) Power Dissipation RqJA (Notes 1, 3) TA = 25°C ID −10.
4 A Steady TA = 100°C State TA = 25°C PD −7.
3 3.
1 W TA = 100°C 1.
6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 210 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Source C...

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NVTYS014P04M8L Power MOSFET - ON Semiconductor

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