NPN power transistor - STMicroelectronics
Description
BULD742C
High voltage fast-switching NPN power transistor
Features
■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed
Applications
■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
3 1 DPAK
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
Marking
BULD742CT4
BULD742C
Package DPAK
Packaging Tape & reel
August 2007
Rev 1
1/12
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Contents
Contents
BULD742C
1
Electrical ratings .
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Electrical characteristics .
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1 Electrical characteristics (curves) .
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Test circuit .
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Package mechanical data .
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Packaging mechanical data .
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Revision history .
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BULD742C
1
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Parameter
VCES VCEO VEBO
IC ICM IB IBM Ptot Tstg TJ
Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms) Collector current Collector peak current (tP ...
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