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BTA26600BW

STMicroelectronics
Part Number BTA26600BW
Manufacturer STMicroelectronics
Published Jan 18, 2022
Description 25A Triacs
Detailed Description BTA26, BTB26 Datasheet 800 V and 600 V, 25 A standard Triacs in T
Datasheet PDF File BTA26600BW PDF File

BTA26600BW
BTA26600BW



Overview
BTA26, BTB26 Datasheet 800 V and 600 V, 25 A standard Triacs in TOP3 package A2 G A1 A2 A1 A2 G TOP3 Isolated A1 A2 G TOP3 Product status link BTA26 TOP3 isolated package BTB26 TOP3 package Features • High current Triac • Low thermal resistance with clip bonding • Standard commutation (4 quadrants) or snubberless (3 quadrants), both with high turn-off commutation • BTA26 UL1557 recognized components (file ref: 81734) • RoHS (2002/95/EC) compliant packages Application • On/off function in static relays, heating regulation, induction motor starting circuits • Phase control operations in light dimmers and motor speed controllers Description Available in TOP3 insulated and non-insulated package, BTA26 and BTB26 are suitable for general purpose AC switching.
BTA26 and BTB26 provide an insulated tab (rated at 2500 VRMS).
These components are UL recognized and meet UL 1557 (file ref.
81734).
Product summary IT(RMS) VDRM/VRRM IGT(standard) IGT(Snubberless) BTA26(1) 25 A 600 V to 800 V 50 mA 35 / 50 mA 1.
600 V version available only with IGT = 50 mA (Snubberless and Standard) DS13701 - Rev 2 - July 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com BTA26, BTB26 Characteristics 1 Characteristics Symbol IT(RMS) ITSM I2t dl/dt VDSM, VRSM IGM PG(AV) Tstg Tj TL VINS Table 1.
Absolute maximum ratings Parameters Value Unit RMS on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Non repetitive surge peak off-state voltage BTA26 (TOP3 Ins.
) Tc = 100 °C 25 A BTB26 (TOP3) Tc = 105 °C f = 60 Hz f = 50 Hz tp = 16,7 ms 260 A tp = 20 ms 250 tp = 10 ms 340 A2s f = 120 Hz Tj = 125 °C 50 A/µs tp = 20 ms Tj = 25 °C VDRM, VRRM + 100 V Peak gate current Average gate power dissipation tp = 20 µs Tj = 125 °C 4 A Tj = 125 °C 1 W Storage junction te...



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