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2SK2980

Part Number	2SK2980
Manufacturer	Renesas
Description	Silicon N-Channel MOSFET
Published	Jan 11, 2022
Detailed Description	2SK2980 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4...
Datasheet	2SK2980 PDF File

Overview

2SK2980 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.
2 Ω typ.
(VGS = 4 V, ID = 500 mA) • 2.
5 V gate drive devices.
• Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 G 2 Note: Marking is “ZZ–” REJ03G1061-0400 (Previous: ADE-208-571B) Rev.
4.
00 Sep 07, 2005 D 1.
Source 2.
Gate 3.
Drain S Rev.
4.
00 Sep 07, 2005 page 1 of 6 2SK2980 Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS +12 –10 Drain current Drain peak current Channel dissipation ID 1.
0 ID(pulse)Note1 4 Pch Note2 0.
8 Channel temperature Tch 150 Storage temperature...

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