SILICON NPN TRANSISTOR - Central Semiconductor
Description
2N5088 2N5089
SILICON NPN TRANSISTORS
w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5088 and 2N5089 are silicon NPN transistors designed for low level, low noise amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=20V
ICBO
VCB=15V
IEBO
VEB=3.
0V
IEBO
VEB=4.
5V
BVCBO
IC=100μA
BVCEO
IC=1.
0mA
VCE(SAT) IC=10mA, IB=1.
0mA
VBE(ON)
VCE=5.
0V, IC=10mA
hFE
VCE=5.
0V, IC=0.
1mA
hFE
VCE=5.
0V, IC=1.
0mA
hFE
VCE=5.
0V, IC=10mA
hfe
VCE=5.
0V, IC=1.
0mA, f=1.
0kHz
fT
VCE=5.
0V, IC=0.
5mA, f=20MHz
Cob
VCB=5.
0V, IE=0, f=100kHz
Cib
VEB=0.
5V, IC=0, f=100kHz
NF
VCE=5.
0V, IC=100μA, RS=10kΩ,
f=10Hz to 15.
7kHz
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA JC
2N5088 35
2N5089 30
30
25
4.
5
50
625
-65 to +150
200
83.
3
2N5088
MIN MAX
-
50
-
-
-
50
-
100
35
-
30
-
-
0.
5
-
0.
8
300 900
350
-
300
-
350 1.
4K
50
-
-
4.
0
-
15
2N5089
MIN MAX
-
-
-
50
-
50
-
100
30
-
25
-
-
0.
5
-
0.
8
400 1.
2K
450
-
400
-
450 1.
8K
50
-
-
4.
0
-
15
-
3.
0
-
2.
0
UNITS V V V mA
mW °C °C/W °C/W
UNITS nA nA nA nA V V V V
MHz pF pF
dB
R1 (20-June 2016)
2N5088 2N5089 SILICON NPN TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER
w w w.
c e n t r a l s e m i .
c o m
R1 (20-June 2016)
2N5088 2N5089 SILICON NPN TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
w w w.
c e n t r a l s e m i .
c o m
R1 (20-June 2016)
2N5088 2N5089 SILICON NPN TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
w w w.
c e n t r a l s e m i .
c o m
R1 (20-June 2016)
...
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