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FDMS3660S

ON Semiconductor
Part Number FDMS3660S
Manufacturer ON Semiconductor
Description Asymmetric Dual N-Channel MOSFET
Published Dec 12, 2021
Detailed Description FDMS3660S PowerTrench) Power Stage Asymmetric Dual N−Channel MOSFET Description This device includes two specialized N−C...
Datasheet PDF File FDMS3660S PDF File

FDMS3660S
FDMS3660S

Overview
FDMS3660S PowerTrench) Power Stage Asymmetric Dual N−Channel MOSFET Description This device includes two specialized N−Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Features Q1: N−Channel • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max rDS(on) = 11 mW at VGS = 4.
5 V, ID = 11 A Q2: N−Channel • Max rDS(on) = 1.
8 mW at VGS = 10 V, ID = 30 A • Max rDS(on) = 2.
2 mW at VGS = 4.
5 V, ID = 27 A • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses ...


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