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2N3055G

Part Number	2N3055G
Manufacturer	ON Semiconductor
Description	Complementary Silicon Power Transistors
Published	Dec 4, 2021
Detailed Description	2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistor...
Datasheet	2N3055G PDF File

Overview

2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.
Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.
1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operating Area • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCER VCB VEB IC IB PD 60 70 100 7 15 7 115 0.
657 Vdc Vdc Vd...

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