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EPC2012C

Part Number	EPC2012C
Manufacturer	EPC
Description	Power Transistor
Published	Dec 4, 2021
Detailed Description	eGaN® FET DATASHEET EPC2012C – Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A D G S EPC201...
Datasheet	EPC2012C PDF File

Overview

eGaN® FET DATASHEET EPC2012C – Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A D G S EPC2012C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25˚C, RθJA = 26°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Vo...

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