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KSD5075T

Part Number	KSD5075T
Manufacturer	NJS
Description	Silicon NPN Power Transistor
Published	Dec 3, 2021
Detailed Description	20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , One. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212...
Datasheet	KSD5075T PDF File

Overview

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.
S.
A.
, One.
Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5075T DESCRIPTION • High Breakdown Voltage- :VCBo=1500V(Min) • High Switching Speed • High Reliability APPLICATIONS • Electronic ballast applicaition • High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 • V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.
5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC-25'C 10 A 75 W Tj Junction Temperature 150 'C Tstg Stor...

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