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CSD18504KCS

Texas Instruments
Part Number CSD18504KCS
Manufacturer Texas Instruments
Description Power MOSFETs
Published Nov 7, 2021
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18504KCS SLPS365A – OCTOBER...
Datasheet PDF File CSD18504KCS PDF File

CSD18504KCS
CSD18504KCS

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18504KCS SLPS365A – OCTOBER 2012 – REVISED FEBRUARY 2015 CSD18504KCS 40 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • TO-220 Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40 V, 5.
5 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 40 19 3.
5 VGS = 4.
5 V 8.
0 VGS = 10 V 5.
5 1.
9 UNIT V nC nC mΩ mΩ V Device CSD18504KCS Ordering Information(1) Package Media Qty Ship TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain to Source Voltage VGS Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) PD Power Dissipation TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, single pulse ID = 42 A, L = 0.
1 mH, RG = 25 Ω VALUE 40 ±20 100 89 63 238 115 –55 to 175 88 UNIT V V A A W °C mJ (1) Max RθJC = 1.
3ºC/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 20 18 TC = 25°C, I D = 40 A TC = 125°C, I D = 40 A 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to-Source Voltage (V) D007 10 ID = 40 A VDS = 20 V 8 Gate Charge 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 Qg - Gate Charge (nC) D004 1 An IMPORTAN...


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