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CSD18502Q5B

Texas Instruments
Part Number CSD18502Q5B
Manufacturer Texas Instruments
Description Power MOSFETs
Published Nov 7, 2021
Detailed Description Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD18502Q5B SLP...
Datasheet PDF File CSD18502Q5B PDF File

CSD18502Q5B
CSD18502Q5B

Overview
Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD18502Q5B SLPS320B – NOVEMBER 2012 – REVISED MAY 2017 CSD18502Q5B 40 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb-Free Terminal Plating • RoHS Compliant • Halogen-Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Motor Control Product Summary TA = 25°C VDS Drain to source voltage Qg Gate charge total (4.
5 V) Qgd Gate charge gate to drain RDS(on) Drain to source on resistance VGS(th) Threshold voltage TYPICAL VALUE 40 25 8.
4 VGS = 4.
5 V 2.
5 VGS = 10 V 1.
8 1.
8 UNIT V nC nC mΩ mΩ V DEVICE CSD18502Q5B CSD18502Q5BT Ordering Information(1) QTY MEDIA PACKAGE SHIP 2500 13-Inch Reel SON 5 mm × 6 mm Tape and 250 7-Inch Reel Plastic Package Reel (1) For all available packages, see the orderable addendum at the end of the datasheet.
3 Description This 40-V, 1.
8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain to source voltage VGS Gate to source voltage Continuous drain current (package limited) VALUE 40 ±20 100 UNIT V V ID Continuous drain current (silicon limited), TC = 25°C 204 A Continuous drain current(1) 26 IDM Pulsed drain current(2) Power dissipation(1) PD Power dissipation, TC = 25°C 400 A 3.
2 W 156 TJ Operating junction temperature –55 to 150 °C Tstg Storage temperature –55 to 150 °C EAS Avalanche energy, single pulse ID = 88 A, L = 0.
1 mH, RG = 25 Ω 387 mJ (1) Typical RθJA = 40°C/W on a 1 inch2 , 2 oz.
Cu pad on a 0.
06 inch thick FR4 PCB.
(2) Max RθJC = 0.
8°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 8 TC = 25°C, I D = 30 A 7 ...


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