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CSD18540Q5B

Texas Instruments
Part Number CSD18540Q5B
Manufacturer Texas Instruments
Description Power MOSFETs
Published Nov 7, 2021
Detailed Description Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18540Q5B SLPS488B – JUNE 2014 ...
Datasheet PDF File CSD18540Q5B PDF File

CSD18540Q5B
CSD18540Q5B

Overview
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18540Q5B SLPS488B – JUNE 2014 – REVISED APRIL 2017 CSD18540Q5B 60-V, N-Channel NexFET™ Power MOSFETs 1 Features •1 Ultra-Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Isolated Converter Primary Side Switch • Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 41 6.
7 VGS = 4.
5 V 2.
6 VGS = 10 V 1.
8 1.
9 UNIT V nC nC mΩ V DEVICE CSD18540Q5B CSD18540Q5BT Device Information(1) QTY MEDIA PACKAGE 2500 13-Inch Reel SON 5.
00-mm × 6.
00-mm 250 7-Inch Reel Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
3 Description This 1.
8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.
Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 60 ±20 100 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C 205 A Continuous Drain Current(1) 29 IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C 400 A 3.
8 W 188 TJ, Operating Junction, Tstg Storage Temperature –55 to 175 °C EAS Avalanche Energy, Single Pulse ID = 80 A, L = 0.
1 mH, RG = 25 Ω 320 mJ (1) Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a 0.
06-in thick FR4 PCB.
(2) Max RθJC = 0.
8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 5 4.
5 TC = 25°C,...


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