NPT IGBT - International Rectifier
Description
Bulletin I27194 rev.
A 01/06
"HALF-BRIDGE" IGBT MTP
40MT120UHA 40MT120UHTA
UltraFast NPT IGBT
Features • UltraFast Non Punch Through (NPT)
Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery and Low VF • Square RBSOA • Al2O3 DBC • Optional SMD Thermistor (NTC) • Very Low Stray Inductance Design for
High Speed Operation
Benefits
• Optimized for Welding, UPS and SMPS Applications
• Rugged with UltraFast Performance • Benchmark Efficiency above 20KHz • Outstanding ZVS and Hard Switching
Operation • Low EMI, requires Less Snubbing • Excellent Current Sharing in Parallel
Operation • Direct Mounting to Heatsink • PCB Solderable Terminals • Very Low Junction-to-Case Thermal Resis
tance
Absolute Maximum Ratings
Parameters
VCES IC
I CM I LM IF I FM VGE VISOL PD
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current Clamped Inductive Load Current
@ TC = 22°C @ TC = 104°C
Diode Continuous Forward Current Diode Maximum Forward Current
@ TC = 105°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
@ TC = 25°C @ TC = 100°C
VCES = 1200V IC = 80A
MMTP
Max
1200 80 40 160 160 21 160 ± 20
2500 463 185
Units
V A
V W
www.
irf.
com
1
40MT120UHA, 40MT120UHTA
Bulletin I27194 rev.
A 01/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
∆V(BR)CES/ Temperature Coeff.
of
∆TJ
Breakdown Voltage
VCE(ON) Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
4
∆VGE(th)/ Temperature Coeff.
of
∆TJ
Threshold Voltage
gfe
Transconductance
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
+1.
1
3.
36 4.
53 3.
88 5.
35
-12
35
0.
4 0.
2
V VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 3mA (25-125°C)
3.
59 V VGE = 15V, I...
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