N-CHANNEL POWER MOSFET - International Rectifier
Description
PD-94695H
IRHLF770Z4 2N7621T2
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-205AF (TO-39)
60V, N-CHANNEL
TECHNOLOGY
Product Summary Part Number Radiation Level
IRHLF770Z4 100 kRads(Si)
IRHLF730Z4 300 kRads(Si)
RDS(on)
0.
65 0.
65
ID
1.
6A* 1.
6A*
Description
IRHLF770Z4 is part of the International Rectifier HiRel family of products.
IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.
The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.
This is achieved while maintaining single event gate rupture and single event burnout immunity.
The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.
3-5V source.
It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available.
TO-39
Features
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Light Weight Complementary P-Channel Available -
IRHLF7970Z4 ESD Rating: Class 0 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings Symbol
Parameter
ID @ VGS = 4.
5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.
5V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt TJ TSTG
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Lead Temperature
Weight
Value
1.
6*
Pre-Irradiation Units
1.
0*
A
6.
4
5.
0
W
0.
04
W/°C
± 10 6.
9
1.
6 0.
5 3.
5 -55 to + 150
V mJ A mJ V/ns
°C
300 (0.
063 in.
/1.
6 mm from case for 10s)
0.
98 (Typical)
g
* D...
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