Silicon P-Channel MOSFET - Renesas
Description
2SJ548
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance RDS (on) = 0.
075 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
G
123
REJ03G0895-0300 (Previous: ADE-208-639A)
Rev.
3.
00 Sep 07, 2005
D 1.
Gate 2.
Drain 3.
Source
S
Rev.
3.
00 Sep 07, 2005 page 1 of 7
2SJ548
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS VGSS
ID ID (pulse) Note 1
IDR IAP Note 3 EAR Note 3 Pch Note 2
Tch
Tstg
Value –60 ±20 –15 –60 –15 –15 19 30 150 –55 to +150
(Ta = 25°C) Unit
V V A A A A mJ W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time
Note: 4.
Pulse test
Symbol V (BR) DSS V (BR) GSS
IDSS IGSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on)
tr td (off)
tf VDF trr
Min –60 ±20 — — –1.
0 — — 6.
5 — — — — — — — — —
Typ — — — — — 0.
075 0.
105 11 850 420 110 12 75 125 75 –1.
1 70
Max — — –10 ±10 –2.
0 0.
095 0.
155 — — — — — — — — — —
Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns
(Ta = 25°C) Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16 V, VDS = 0 ID = –1 mA, VDS = –10 V ID = –8 A, VGS = –10 V Note 4 ID = –8 A, VGS = –4 V Note 4 ID = –8 A, VDS = –10 V Note 4 VDS = –10 V VGS = 0 f = 1...
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