N-Channel MOSFET - Renesas
Description
2SK1215
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R )
*CMPAK is a trademark of Renesas Technology Corp.
REJ03G0813-0200 (Previous ADE-208-1176)
Rev.
2.
00 Aug.
10.
2005
3
1 2
1.
Gate 2.
Drain 3.
Source
Rev.
2.
00 Aug 10, 2005 page 1 of 5
2SK1215
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1.
VGS = –4 V
Symbol VDSX*1 VGSS
ID IG Pch Tch Tstg
Ratings 20 ±5 30 ±1 100 150
–55 to +150
(Ta = 25°C)
Unit V V mA mA
mW °C °C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSX
20
Gate cutoff current Drain current
IGSS
—
IDSS*1
6
Gate to source cutoff voltage
VGS(off)
0
Forward transfer admittance
|yfs|
8
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Power gain
PG
24
Noise figure
NF
—
Note: 1.
The 2SK1215 is grouped by IDSS as follows.
Typ — — — — 14 2.
5 1.
6 0.
03 — —
Max — ±20 12 –2.
0 — — — — — 3
Unit V nA mA V mS pF pF pF dB dB
(Ta = 25°C)
Test conditions ID = 100 µA, VGS = –4 V VGS = ±5 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 10 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 100 MHz
Mark IDSS
Grade
E IGE 6 to 10
F IGF 8 to 12
Rev.
2.
00 Aug 10, 2005 page 2 of 5
Channel Power Dissipation Pch (mW)
2SK1215
Maximum Channel Dissipation Curve 600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
Drain Current ID (mA)
Typical Transfer Characteristics 10.
0
VDS = 10 V 8.
0
F 6.
0
E
4.
0
2.
0
0 –2.
0 –1.
6 –1.
2 –0.
8 –0.
4 0
Gate to Source Voltage VGS (V)
Forward Transfer Admittance vs.
Drain Current
100
VDS = 10 V
50
f = 1 kHz
20 10
5
2
1 0.
2 0.
5 1.
0 2
5 10 20
Drain Current ID (mA)
Forward Transfer Admittance ⏐yfs⏐ (mS)
Input Capacitance Ciss (pF)
Forward Transfer Admittance ⏐yfs⏐ (mS)
Drain Current ...
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