N-Channel MOSFET - Renesas
Description
2SK3148
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =45 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1073-0200 (Previous: ADE-208-748)
Rev.
2.
00 Sep 07, 2005
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G
1.
Gate
2.
Drain
3.
Source
12 3
S
Rev.
2.
00 Sep 07, 2005 page 1 of 7
2SK3148
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10µs, duty cycle ≤ 1 %
2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note3 EAR Note3 Pch Note2
Tch
Tstg
Ratings 100 ±20 20 80 20 20 40 30 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C °C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS 100
—
—
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA VDS = 100 V, VGS = 0
Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance
VGS(off)
1.
0
—
2.
5
V ID = 1 mA, VDS = 10 V
RDS(on)
—
45
60
mΩ ID = 10 A, VGS = 10 VNote4
RDS(on)
—
65
85
mΩ ID = 10 A, VGS = 4 V Note4
|yfs|
8.
5
14
—
S ID = 10 A, VDS = 10 V Note4
Input capacitance
Ciss
—
900
—
pF VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
400
—
pF f = 1 MHz
Reverse transfer capacitance
Crss
—
210
—
pF
Turn-on delay time
td(on)
—
15
—
Rise time
tr
—
120
—
Turn-off delay time
td(off)
—
200
—
Fall time
tf
—
150
—
Body–drain diode forward voltage
VDF
—
0.
9
—
Body–drain diode reverse recovery
trr
time
—
9...
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