N-Channel MOSFET - Renesas
Description
2SK2928
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.
040 Ω typ.
• 4 V gate drive devices.
• High speed switching
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
G
123
REJ03G1042-0400 (Previous: ADE-208-551B)
Rev.
4.
00 Sep 07, 2005
D 1.
Gate 2.
Drain (Flange) 3.
Source
S
Rev.
4.
00 Sep 07, 2005 page 1 of 7
2SK2928
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 %
2.
Value at Ta = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note3 EAR Note3 Pch Note2
Tch
Tstg
Ratings 60 ±20 15 60 15 15 19 40 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C °C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20
Zero gate voltage drain current
IDSS
—
Gate to source leak current
IGSS
—
Gate to source cutoff voltage
VGS(off)
1.
5
Static drain to source on state resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
7
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Note: 4.
Pulse test
Typ — — — — — 0.
040 0.
060 11 500 260 110 10 80 100 110 0.
9 50
Max — — 10 ±10 2.
5 0.
052 0.
105 — — — — — — — — — —
Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns
(Ta = 25°C)
Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±16 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 V Note4 ID = 8 A, VGS = 4 V Note4 ID = 8 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz
VGS = 10 V, ID =...
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