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FGA25N120ANTDTU

ON Semiconductor
Part Number FGA25N120ANTDTU
Manufacturer ON Semiconductor
Description NPT Trench IGBT
Published Oct 9, 2021
Detailed Description FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Techn...
Datasheet PDF File FGA25N120ANTDTU PDF File

FGA25N120ANTDTU
FGA25N120ANTDTU

Overview
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.
0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.
96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven.
C GCE TO-3P Absolute Maximum Ratings Symbol Description VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward ...


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