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C1815

Fairchild Semiconductor
Part Number C1815
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Jul 28, 2021
Detailed Description KSC1815 KSC1815 Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage : VCBO...
Datasheet PDF File C1815 PDF File

C1815
C1815

Overview
KSC1815 KSC1815 Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage : VCBO= 50V 1 TO-92 1.
Emitter 2.
Collector 3.
Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 50 400 125 -55 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob NF Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA VCE=6V, IC=150mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.
1mA RS=10kΩ, f=1Hz Min.
70 25 80 Typ.
0.
1 2.
0 1.
0 Max.
0.
1 0.
1 700 Units µA µA 0.
25 V 1.
0 V MHz 3.
0 pF 1.
0 dB hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 GR 200 ~ 400 L 350 ~ 700 ©2002 Fairchild Semiconductor Corporation Rev.
A2, September 2002 Typical Characteristics IC[mA], COLLECTOR CURRENT 100 80 60 40 20 0 0 IB = 400µA IB = 350µA IB = 300µA I B = 250µA I B = 200µA IB = 150µA I B = 100µA IB = 50µA 4 8 12 16 20 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1.
Static Characteristic 1000 VCE = 6V hFE, DC CURRENT GAIN 10 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 3.
DC current Gain 100 f=1MHz IE=0 10 Cob[pF], CAPACITANCE 1 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5.
Output Capacitance ©2002 Fairchild Semiconductor Corporation fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE IC[mA], COLLECTOR CURRENT 100 VCE=6V 10 1 ...


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