DatasheetsPDF.com

0150SC-1250M

Microsemi
Part Number 0150SC-1250M
Manufacturer Microsemi
Description Silicon Carbide SIT
Published Jul 28, 2021
Detailed Description 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICA...
Datasheet PDF File 0150SC-1250M PDF File

0150SC-1250M
0150SC-1250M

Overview
...TION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz.
The transistor is designed for use in High Power Amplifiers supporting applications such as VHF Weather Radar and Long Range Tracking Radar.
The device is the first in a series of High Power Silicon Carbide Transistors from Microsemi PPG.
CASE OUTLINE 55KT FET (Common Gate) See outline drawing ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Drain Current (Idg) Temperatures Storage Temperature Operating Junction Temperature 250 V - 1V 35A -65 to +150°C +25...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)