N-Channel MOSFET - ON Semiconductor
Description
FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET
FDP18N50 / FDPF18N50 / FDPF18N50T
N-Channel UniFETTM MOSFET
500 V, 18 A, 265 mΩ
Features
• RDS(on) = 220 mΩ (Typ.
) @ VGS = 10 V, ID = 9 A
Description
• Low Gate Charge (Typ.
45 nC) • Low Crss (Typ.
25 pF) • 100% Avalanche Tested
Applications
• LCD/LED/PDP TV • Lighting
UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
• Uninterruptible Power Supply
D
GDS
TO-220
GDS
G
TO-220F
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
FDP18N50
FDPF18N50 / FDPF18N50T
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
18
18 *
10.
8
10.
8 *
72
72 *
±30
945
18
23.
5
4.
5
PD
TJ, TSTG TL
Power Dissipation
(TC = 25°C) - Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
235
38.
5
1.
88
0.
3
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP18N50
0.
53 62.
5
FDPF18N50 / FDPF18N50T
3.
3
62.
5
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
Unit
°C/W °C/W
©2012 Semiconductor Components Industries, LLC.
November-2017, Rev 3
Publication Order Number: FDPF18N50T/D
FDP18N50 / FDPF18N50 / F...
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