IGBT - MacMic
Description
April 2018
Version 01
MM25G3T120B
1200V 25A IGBT RoHS Compliant
PRODUCT FEATURES
□ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
□ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems
1 2 3
1.
Gate 2.
Collector 3.
Emitter
Type
VCES
IC
MM25G3T120B 1200V 25A
VCE(sat) TJ=25°C 1.
8V
TJmax 175°C
Marking MM25G3T120B
Package TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25℃ TC=110℃
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV)
Average Forward Current
TC=100℃
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max.
Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
Recommended（M3）
Weight
Values
Unit
1200 V
±20
40
25
A
80
326
W
1200
V
20 A
40
175
-40~175
℃
-55~150
1.
1
Nm
8
g
MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.
macmicst.
com
1
MM25G3T120B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1mA
VCE(sat)
Collector Emitter Saturation Voltage
IC=25A, VGE=15V, TJ=25℃ IC=25A, VGE=15V, TJ=125℃ IC=25A, VGE=15V, TJ=150℃
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=150℃
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25℃
Qg
Gate Charge
VCE=600V, IC=25A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VG...
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