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DMJ70H1D4SV3

INCHANGE
Part Number DMJ70H1D4SV3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published May 10, 2021
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Sta...
Datasheet PDF File DMJ70H1D4SV3 PDF File

DMJ70H1D4SV3
DMJ70H1D4SV3

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5.
0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 700 V ±30 V ID Drain Current-Continuous 5.
0 A IDM Drain Current-Single Pluse 6.
0 A PD Total Dissipation @TC=25℃ 78 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
8 ℃/W DMJ70H1D4SV3 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherw...


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