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DMG4800LK3

INCHANGE
Part Number DMG4800LK3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published May 10, 2021
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Stati...
Datasheet PDF File DMG4800LK3 PDF File

DMG4800LK3
DMG4800LK3

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 30 V ±25 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 1.
71 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage T...


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