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40N60FL

Part Number	40N60FL
Manufacturer	ON Semiconductor
Description	IGBT
Published	May 2, 2021
Detailed Description	NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construct...
Datasheet	40N60FL PDF File

Overview

NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inverters • Uninterruptable Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC...

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