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FDMA410NZT

ON Semiconductor
Part Number FDMA410NZT
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Apr 30, 2021
Detailed Description MOSFET – N-Channel, POWERTRENCH), Ultra Thin, 1.5 V 20 V, 9.5 A, 23 mW FDMA410NZT Description This Single N−Channel MOSF...
Datasheet PDF File FDMA410NZT PDF File

FDMA410NZT
FDMA410NZT

Overview
MOSFET – N-Channel, POWERTRENCH), Ultra Thin, 1.
5 V 20 V, 9.
5 A, 23 mW FDMA410NZT Description This Single N−Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.
5 V on special MicroFETt leadframe.
This design is similar to the FDMA410NZ, however it features our new advanced 0.
55 mm max 2 x 2 MLP package technology.
Features • 0.
55 mm max package height MicroFET 2 x 2 mm Package • Max RDS(on) = 23 mW at VGS = 4.
5 V, ID = 9.
5 A • Max RDS(on) = 29 mW at VGS = 2.
5 V, ID = 8.
0 A • Max RDS(on) = 36 mW at VGS = 1.
8 V, ID = 4.
0 A • Max RDS(on) = 60 mW at VGS = 1.
5 V, ID = 2.
0 A • HBM ESD protection level > 1.
5 kV (Note 3) • These Devices are...


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