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4435

Fairchild Semiconductor
Part Number 4435
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Apr 25, 2021
Detailed Description FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged ...
Datasheet PDF File 4435 PDF File

4435
4435

Overview
FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.
5V – 25V).
Applications • Power management • Load switch • Battery protection Features • –8.
8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.
5 V • Low gate charge (17nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS4435 FDS4435 13’’ ©2001 Fairchild Semiconductor Corporation 5 4 6 3 7 2 8 1 Ratings –30 ±25 –8.
8 –50 2.
5 1.
2 1 –55 to +175 50 125 25 Tape width 12mm Units V V A W °C °C/W °C/W °C/W Quantity 2500 units FDS4435 Rev F1(W) FDS4435 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BV DSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = 0 V –21 mV/°C –1 µA IGSSF Gate–Body Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –25 V, ...


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