PNP NMOSFET - AWINIC
Description
AW3112
Feb 2019 V1.
2
30V/3A PNP Low VCESAT BJT, Integrated with 20V Trench NMOSFET
FEATURES
GENERAL DESCRIPTION
l
Low collector-emitter saturation voltage Large current capability High current gain DFN2mm×2mm-6L Package
tia The AW3112 is 30V PNP power bipolar transistor
using epitaxial planar technology, integrating with a 20V trench NMOSFET as a switch transistor of base.
RoHS compliant
n The AW3112 has low VCESAT and high current gain.
It is suitable for linear regulator in battery charging
APPLICATIONS
Battery Charging Portable Device Power Management
application.
e AW3112 is available in DFN2mm×2mm×0.
75mm-
6L package.
It is specified among the industrial
fid temperature range of -40℃ and +85℃
PIN CONFIGURATION AND MARKING
n AW3112DNR Top View
(DFN2×2-6L)
o 6(C)
5(C)
4(S)
AW3112DNR Marking (DFN2×2-6L)
C
ic
in 7(C)
8(B/D)
AW12 XXYY
1(E)
2(E)
w
a
3(G)
AW12-AW3112DNR XXYY- Production Tracing Code
Figure 1 Pin Configuration and Top Mark
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awinic.
com.
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1
Copyright © 2015 SHANGHAI AWINIC TECHNOLOGY CO.
, LTD
PIN DEFINITION
AW3112
Feb 2019 V1.
2
No.
NAME
DESCRIPTION
1
E
Emitter of 30V PNP BJT transistor.
2
E
3
G
Gate of 20V NMOS transistor.
l
4 5 6 7
S C C C
tia Source of 20V NMOS transistor.
Collector of 30V PNP BJT transistor.
Exposed pad, should be connected to pin5/6 on PCB board.
8
B/D
n Exposed pad, the junction of PNP base and NMOS drain, should be
floated on PCB board.
TYPICAL APPLICATION CIRCUITS
e
VBUS
330kΩ
fid 39kΩ
VCDT
n 3.
3kΩ
CHR_LDO
o
1µF
1 µF
C E(1,2)
G(3)
ic B/D(8) AW3112
in
C(5,6,7)
S(4)
VDRV
PMU
ISENS
aw
R SENSE
0.
2Ω
Battery
BATSENS
Figure 2 AW3112 Application Circuit with MTK PMU, e.
g.
MT6323 MT6329NOTE1
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awinic.
com.
cn
2
Copyright © 2015 SHANGHAI AWINIC TECHNOLOGY CO.
, LTD
AW3112
Feb 2019 V1.
2
Note1: The red route in the figure above indicates the large current path, please pay attention to the ...
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