Ultrafast IGBT - Fairchild Semiconductor
Description
SGH40N60UFD
SGH40N60UFD
Ultra-Fast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
• High speed switching • Low saturation voltage : VCE(sat) = 2.
1 V @ IC = 20A • High input impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.
)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VCES VGES
IC
ICM (1) IF IFM PD
TJ Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current Collector Current Pulsed Collector Current
@ TC = 25°C @ TC = 100°C
Diode Continuous Forward Current Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature
@ TC = 25°C @ TC = 100°C
Storage Temperature Range
Maximum Lead Temp.
for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes : (1) Repetitive rating : Pulse width limited by max.
junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT) RθJC(DIODE) RθJA
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
G
E
SGH40N60UFD 600 ± 20 40 20 160 15 160 160 64
-55 to +150 -55 to +150
300
Typ.
----
Max.
0.
77 1.
7 40
Units V V A A A A A W W °C °C °C
Units °C/W °C/W °C/W
©2002 Fairchild Semiconductor Corporation
SGH40N60UFD Rev.
A1
SGH40N60UFD
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ∆BVCES/ ∆TJ ICES IGES
Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VC...
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